All-Silicon Optical Devices Based On Photon-Emitting Point Defects: Boosting Collective Effects

27 Oct 2023

Job Information

Organisation/Company

INSA de Lyon

Research Field

Engineering » Communication engineering

Researcher Profile

Recognised Researcher (R2)

Leading Researcher (R4)

First Stage Researcher (R1)

Established Researcher (R3)

Country

France

Application Deadline

25 Nov 2023 - 22:00 (UTC)

Type of Contract

Temporary

Job Status

Full-time

Offer Starting Date

1 Jan 2024

Is the job funded through the EU Research Framework Programme?

Not funded by an EU programme

Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

Silicon emitting centers (SECs) are local modifications of the crystalline lattice of bulk silicon, in the form of interstitial or substitutional atoms, that can emit light in or close to the near-infrared telecom wavelength bands. SECs are a novel and recent approach to integrating telecom optical sources in silicon photonics components and are beginning to gain traction at national and international levels i.iiiii. While promising results have already been published, there are still many issues to be studied in detail: how to generate the desired point defects in a spatially deterministic way? How can they be best integrated into silicon photonics components? What performances should we target?

In this thesis, the recruited PhD student will work on:

The development of innovative techniques for the creation of SEC populations by using the equipment available on the Nanolyon platform (nanofabrication equipment) or at the CLYM centre (advanced microscopy platform), or through national collaborations.

The study of the optical properties of the generated SECs (lifetime of the excited state, quantum efficiency under optical pumping, studies as a function of the system temperature, etc.).

Design, fabrication and characterization of photonic structures (photonic crystals, ...) that can enhance and control the direction and polarization of photons emitted by SECs coupled to optical modes.

This work will build on existing expertise in the host laboratory and on work already carried out on this theme and with various partners iv,v. The ultimate goal of the thesis is to demonstrate the stimulated emission, or even an emission in the Superradiance regime, of a large population of SECs hosted in a photonic crystal.

The thesis is part of a project funded by the ANR (French National Research Agency), and will be hosted in the Functional Materials and Nanostructures team of the Institut des Nanotechnologies de Lyon (INL). The candidate will be enrolled at INSA Lyon, and will carry out her/his research on the university campus of La Doua (Villeurbanne), in the Irène Joliot Curie building. The supervisory team will be composed of Dr. Nicolas Chauvin (CNRS researcher, HDR) and Dr. Thomas Wood (Assistant Professor at INSA Lyon), and the work will be assisted by other permanent researchers at the INL and the technical staff of the platforms concerned.

i « Single artificial atoms in silicon emitting at telecom wavelengths », Redjem et al, Nature Electronics, 2020, https: // doi.org/10.1038/s41928-020-00499-0

ii « Cavity-Enhanced Single-Photon Emission from Artificial Atoms in Silicon », Wise et al, Technical Digest Series CLEO 2023, https: // doi.org/10.1364/CLEOSI.2023.SM3P.1

iii « All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity », Redjem et al, Nat Comms 14 :3321, 2023, https: // doi.org/10.1038/s41467-023-38559-6

iv « Light Emitting Si-Based Mie Resonators: Toward a Huygens Source of Quantum Emitters », Khoury, et al., Adv. Optical Mater. 2201295 (2022), https: // doi.org/10.1002/adom.202201295

v « Femtosecond laser induced creation of G and W-centers in silicon-on- insulator substrates », Quard, et al., preprint (2023), https:// arxiv.org/abs/2304.03551

Funding category: Autre financement public ANR PHD Country: France

Requirements

Specific Requirements

The candidate should have a strong background in physics and a strong interest in semiconductor physics, nanophotonics, nanofabrication and/or experimental studies. Experience in a clean room, as well as in optical characterization/spectroscopy will be appreciated. She/he will have to demonstrate autonomy, quick assimilation and be capable of multinational teamwork requiring interactions in English.

Additional Information Work Location(s)

Number of offers available

1

Company/Institute

INSA de Lyon

Country

France

City

Villeurbanne

Where to apply

Website

https: // www. abg.asso.fr/fr/candidatOffres/show/idoffre/117485

STATUS: EXPIRED