KC-02 PhD – Ga2O3: fundamental electrical properties and defects in MOS devices
Contract: Full Time/Fixed Term
Ga2O3 is a material that has attracted particular attention recently. This oxide can exist in different crystalline structures. The most stable structure is the orthorhombic -Ga2O3 which presents an ultra-wide bandgap (4.8 eV), a high critical field and electron mobility values up to ~150 cm2/Vs where the electron concentration can be tuned over a wide range (1013 cm-3 – 1020 cm-3) based on the growth conditions. In contrast to other wide band gap materials (GaN, SiC) wafer diameter of 300 mm or larger can be grown by Czochralski resulting in lower fabrication costs for Ga2O3 devices. This combination of electronic and wafer scale properties opens new possibilities in power electronics and applications in harsh environments. Low temperature deposited Ga2O3 could also play an important role in the development of 3D monolithic integration, where active semiconductor switches, memory or sensing elements are integrated in what is traditionally the passive back-end-of-line metallisation.
Ga2O3: Understanding growth, Interfaces and Defects to enable next generation Electronics (GUIDE) is a US-Ireland Research and Development Partnership Project dedicated to the study of fundamental interface and material properties that affect the performance of Ga2O3 devices. The project partners include University of Texas at Dallas (UTD), Tyndall National Institute and Queen's University Belfast (QUB).
Key Responsibilities and research objectives
The PhD thesis will explore the fundamental properties of different crystalline forms (from amorphous to crystalline) of Ga2O3. The effect of Ga2O3 film crystalline structure on electronic transport properties will be investigated. The PhD candidate will use Hall effect measurements to investigate doping compensation mechanisms in these films. The characterisation of defects at the interface between the semiconducting Ga2O3 and the insulating high-k dielectric is another important part of this thesis. This activity will be crucial to the understanding of ferroelectric oxides on Ga2O3 for non-volatile memory applications operating at high temperature or in harsh environments. The PhD candidate is expected to spend research exchange visits at the labs of partners (UTD and QUB) involved in GUIDE.
For queries, please contact: Dr Karim Cherkaoui (email@example.com) or Prof. Paul Hurley (firstname.lastname@example.org)
An annual student stipend of €18,500 applies for this successful candidate for this position. Yearly University academic fees will paid by the Tyndall National Institute.
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