Phd / Design And Realization Of Flexible Mems Based On Heterostructures Of Gan Type Materials M/F

Universities and Institutes of France
September 19, 2022
Contact:N/A
Offerd Salary:Negotiation
Location:N/A
Working address:N/A
Contract Type:Temporary
Working Time:Full time
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Job Ref.:N/A
  • Organisation/Company: CNRS
  • Research Field: Engineering Physics Technology
  • Researcher Profile: First Stage Researcher (R1)
  • Application Deadline: 19/09/2022 23:59 - Europe/Brussels
  • Location: France › METZ
  • Type Of Contract: Temporary
  • Job Status: Full-time
  • Hours Per Week: 35
  • Offer Starting Date: 03/10/2022
  • The IRL 2958 GT-CNRS is a joint international lab created in 2006 by the CNRS and the Georgia Institute of Technology based in Atlanta. This lab, based on the European campus of Georgia Tech-Lorraine, develops its research activities in three main areas: Nonlinear Optics, Smart Materials and Computer Science. The lab has 20 permanent faculty members and about 30 PhD and post-doctoral students. In 2017, the IRL GT CNRS was evaluated very positively by the CNRS national committee. The budget excluding salary of the unit is about 1 M€ / year obtained with ANR, European and/or industrial contracts. The members of the IRL GT CNRS have published, over the last 4 years, 360 articles in international peer-reviewed journals or conferences. The IRL GT CNRS is at the origin of the creation of the PSA Open Lab with Peugeot Citroën. It has also created an international laboratory in Morocco (IRP Atlas). Finally, the IRL GT CNRS is a member of the Carnot Institute ARTS and a member of the LABEX Ganex and Damas and of the IDEX LUE. The IRL GT CNRS is equipped with a state- of-the-art instrumental park (in terms of material growth, advanced characterizations, non-destructive testing techniques, calculations and computer simulations).

    The project aims at implementing and optimizing the growth of GaN and its alloys on structured h-BN in order to fabricate transferable MEMS on flexible substrates. Due to its unique electronic, chemical and mechanical properties, the use of GaN opens the way to a new class of flexible MEMS sensors integrating high frequency electronics and high efficiency transduction means for applications such as implantable sensors or for extreme conditions. The proposed innovative process is based on the selective van der Waals epitaxy method, a concept invented by the international research laboratory Georgia Tech-CNRS and first demonstrated in 2019. Selective growth avoids the need to etch GaN to achieve complex geometries and allows sapphire substrates to be reused after device transfer, leading to a dramatic reduction in the amount of material used. This technique completely changes the post-growth processing as the devices can be recovered individually without laser stripping or substrate etching. This process has been used to isolate individual chips on a substrate, but not yet for the direct realization of mechanical structures with well-defined micrometric geometry. We will therefore adapt this epitaxy method to the direct fabrication of MEMS and study the influence of growth and transfer processes on the mechanical and electrical properties of the semiconductor layers. To meet the challenges raised by this project, we have assembled an interdisciplinary and experienced consortium with complementary skills in metal-organic vapor phase epitaxy (IRL GT-CNRS), microelectronics fabrication (Institut Lafayette), analog electronics (LAAS-CNRS), and MEMS modeling and characterization (IMS).

    The PhD student will be in charge of the fabrication of these structures from h-BN/Al2O3 substrates prepared at the IRL GT-CNRS. This fabrication will be done at the Lafayette Institute. For this, the PhD student will follow several trainings on the different equipments needed (photo-lithography, metal deposition, etching,...). He will then carry out the mechanical transfer, by optimizing a process developed at the IRL GT-CNRS, of the membranes fabricated on flexible substrates. He will then participate to the electro-mechanical characterizations of the MEMS realized within the LAAS and IMS. Note that the PhD student will also be involved, in a more marginal way, in the simulation and design work of the structures which will be carried out within IMS and will also have to take an interest, in an even more marginal way, in the packaging work which will be carried out at LAAS but also in the van der Waals epitaxy work of the various structures carried out at the IRL GT CNRS

    Web site for additional job details

    https: // emploi.cnrs.fr/Offres/Doctorant/IRL2958-NADWER-049/Default.aspx

    Required Research Experiences
  • RESEARCH FIELD
  • Engineering

  • YEARS OF RESEARCH EXPERIENCE
  • None

  • RESEARCH FIELD
  • Physics

  • YEARS OF RESEARCH EXPERIENCE
  • None

  • RESEARCH FIELD
  • Technology

  • YEARS OF RESEARCH EXPERIENCE
  • None

    Offer Requirements
  • REQUIRED EDUCATION LEVEL
  • Engineering: Master Degree or equivalent

    Physics: Master Degree or equivalent

    Technology: Master Degree or equivalent

  • REQUIRED LANGUAGES
  • FRENCH: Basic

    Contact Information
  • Organisation/Company: CNRS
  • Department: GEORGIATECH-CNRS
  • Organisation Type: Public Research Institution
  • Website: https:// www. umi2958.eu
  • Country: France
  • City: METZ
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